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BLA0912-250R Datasheet, NXP Semiconductors

BLA0912-250R transistor equivalent, avionics ldmos power transistor.

BLA0912-250R Avg. rating / M : 1.0 rating-11

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BLA0912-250R Datasheet

Features and benefits


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* High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 App.

Application


* Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME o.

Description

Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source .

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BLA0912-250R Page 1 BLA0912-250R Page 2 BLA0912-250R Page 3

TAGS

BLA0912-250R
Avionics
LDMOS
power
transistor
BLA0912-250
BLA10
BLA1011-10
NXP Semiconductors

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